Preparation and Properties of Ba($Zr_{0.2}Ti_{0.8}$)$O_3$ Thin Films Grown by RF Magnetron Sputtering Method

RF Magnetron 스퍼터링법으로 성장시킨 Ba($Zr_{0.2}Ti_{0.8}$)$O_3$ 박막의 특성

  • 최원석 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 장범식 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 김진철 (삼성전기 기술총괄) ;
  • 박태석 (삼성전기 기술총괄) ;
  • 이준신 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 홍병유 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2001.07.01


We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.


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