Preparation and Properties of Ba($Zr_{0.2}Ti_{0.8}$)$O_3$ Thin Films Grown by RF Magnetron Sputtering Method

RF Magnetron 스퍼터링법으로 성장시킨 Ba($Zr_{0.2}Ti_{0.8}$)$O_3$ 박막의 특성

  • 최원석 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 장범식 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 김진철 (삼성전기 기술총괄) ;
  • 박태석 (삼성전기 기술총괄) ;
  • 이준신 (성균관대학교 전기전자 및 컴퓨터공학부) ;
  • 홍병유 (성균관대학교 전기전자 및 컴퓨터공학부)
  • Published : 2001.07.01

Abstract

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.

References

  1. 전기전자재료학회지 v.9 no.4 ULSI DRAM의 Capacitor 절연막용 BST(Barium Strontium Titanate) 박막의 제작과 특성에 관한 연구 류정선;강성준;윤영섭
  2. Integrated Ferroelectrics v.26 Process Engineering Issue of CSD-Based Thin-Film Multi-Level Ceramic Capacitors M. M. Watt
  3. 고려대학교 박사학위 논문 (Ba,Sr)TiO₃(BST) 박막의 누설전류 및 유전특성 개선 김진철
  4. Thin Solid Films v.386 Study of the Dielectric and Ferroelectric Properties of Chemically Processed $Ba_xSr_{1-x}TiO_3$ Thin Films F. M. Pontes;E. Longo;E. R. Leite;J. A. Varela
  5. 전기전자재료학회논문지 v.12 no.12 BST 박막의 RTA에 따른 전기적 특성 전장배;김덕규;박춘배
  6. Integrated Ferroelectrics v.17 Dielectric Properties, Leakage Behaviour, and Resistance Degradation of Thin Films of the Solid Solution Series $Ba(Ti_{1-y}Zr_y)O_3$ S. Hoffmann;R. Waser
  7. Appl. Phys. Lett. v.69 no.18 Highly Insulative Barium Zirconate-Titanate Thin Films Prepared by RF Magnetron Sputtering for Dynamic Random Access Memory Applications T. B. Wu;C. M. Wu;M. L. Chen
  8. 전기전자재료학회논문지 v.12 no.7 PZT 강유전체 박막 캐패시터와 하부전극에 관한 연구 박영;정세민;문상일;정규원;김성훈;송준태;이준신
  9. J. Am. Ceram. Soc. v.82 no.5 Peroxo-oxalate Preparation of Doped Barium Titanate S. Gijp;L. Winnubst;H. Verweij
  10. J. Am. Ceram. Soc. v.65 no.11 Diffuse Ferroelectric Phase Transitions in $Ba(Ti_{1-y}Zr_y)O_3$ Ceramics D. Hennings;A. Schnell
  11. Integrated Ferroelectrics Characterization and Modelling of Thin-film Ferroelectric Capacitors using C-V Analysis Ciaran J. Brannan
  12. Thin Solid Films v.300 Structural, Electrical, Optical Studies on Rapid Thermally Processed Ferroelectric BaTiO₃Thin Films Prepared by Metallo-Organic Solution Deposition Technique P. C. Joshi;S. B. Desu