Recovery of Etching Damage of Etched PZT Thin Film by Inductively Coupled Plasma

유도결합 플라즈마에 의해 식각된 PZT 박막의 식각 Damage 개선

  • 강명구 (중앙대학교 전자전기공학부) ;
  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2001.07.01

Abstract

In this work, the recovery of etching damage in the etched PZT thin film with $O_2$ annealing has been studied. The PZT thin films were etched as a function of Cl$_2$/Ar and additive CF$_4$ into Cl$_2$(80%) /Ar(20%). the etch rates of PZT thin films were 1600$\AA$/min at Cl$_2$(80%)/Ar(20%) and 1970 $\AA$/min at 30% additive Cf$_4$ into Cl$_2$(80%)/Ar(20%). In order to recover the characteristics of etched PZT thin films, the etched PZT thin films were annealed in $O_2$ atmosphere at various temperatures. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ annealing process. The improvement of ferroelectric behavior is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensities of Pb-O, Zr-O and Ti-O peak increase and the chemical residue peak is reduced by $O_2$ annealing. From the atomic force microscopy (AFM) images. it shows that the surface morphology of re-annealed PZT thin films after etching is improved.

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