A Latch-Up Immunized Lateral Trench IGBT with $p^{+}$ Diverter Structure for Smart Power IC

스마트 파워 IC를 위한 $p^{+}$ Diverter 구조의 횡형 트랜치 IGBT

  • Published : 2001.07.01

Abstract

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

References

  1. Power Semiconductor Devices B. J. Baliga
  2. Trends in Power Semiconductor Devices v.43 no.10 Trends in Power Semiconductor Devices B. J. Baliga
  3. Semiconductor Power Device S. K. Ghandi
  4. proc. of IEEE v.76 no.8 Power Electronics - A Technology Review B. K. Bose
  5. Transactions on Electrical and Electronic Materials v.1 LIGBT with Dual Cathode for Improving Breakdown Characteristics E. G. Kang;S. H. Moon;M. Y. Sung
  6. 전기전자재료학회논문지 v.13 no.5 래치업 특성의 개선과 고속 스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT 강이구;성만영
  7. Transaction on Electrical and Electronic Materials v.2 no.1 Simulation of a Novel Lateral Trench Electrode IGBT with Improved Latch-up and Forward Blocking Characteristics E. G. Kang;S. H. Moon;M. Y. Sung
  8. TMA MEDICI - Two-Dimensional Device Simulation Program TMA MEDICI
  9. IEEE Trans. Electron Devices v.38 no.7 Analysis of Negative Differential Resistance in The I-V Characteristics of Shorted-Anode LIGBT's M. R. Simpson
  10. IEEE Electron Device Letters v.11 no.9 The Complementary Insulated-Gate Bipolar Transistor (CIGBT) - A New Power Switching Device D. M. Boisvert
  11. IEEE Trans. Electron Device Letters v.EDL-4 no.12 Fast Switching Insulated Gate Transistor B. J. Baliga
  12. IEEE Trans. Electron Devices v.46 no.8 A New Lateral Trench-Gate Conductivity Modulated Power Transistor Jun Cai