Effects of Applied Bias Conditions on Electrochemical Etch-stop Characteristics

인가 바이어스 조건이 전기화학적 식각정지 특성에 미치는 영향

  • 정귀상 (동서대학교 정보시스템공학부 메카트로닉스전공) ;
  • 강경두 (동서대학교 정보시스템공학부 메카트로닉스전공) ;
  • 김태송 (KIST 마이크로시스템연구센터) ;
  • 이원재 (KERI 전자기소자연구그룹) ;
  • 송재성 (KERI 전자기소자연구그룹)
  • Published : 2001.04.01


This paper describes the effects of applied bias conditions on electrochemical etch-stop characteristics. THere are a number of key issues such as diode leakage and ohmic losses which arise when applying the conventional 3-electrochemical etch-stop to fabricated some of he MEMS(microelectro mechanical system) and SOI(Si-on-insulator) structures which employ SDB(Si-wafer direct bonding). This work allows to perform anin situ diagnostic to predict whether or not an electrochemical etch-stop would fail due to diode-leakage-induced premature passivation. In addition, it presents technology which takes into account the effects of ohmic losses and allows to calculate the appropriate bias necessary to obtain a successful electrochemical etch-stop.


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