The Properties of Photoinduced Birefringence in Chalcogenide Thin Films by the Electric Field Effects

전계효과에 의한 칼코게나이드 박막에서의 광유기 복굴절 특성

  • 장선주 (광운대학교 공과대학 전자재료공학과) ;
  • 박종화 (광운대학교 공과대학 전자재료공학과) ;
  • 여철호 (광운대학교 공과대학 전자재료공학과) ;
  • 정홍배 (광운대학교 공과대학 전자재료공학과)
  • Published : 2001.01.01

Abstract

We have investigated the photoinduced birefrinence by the electric field effects in chalcogenide thin films. The electric field effects have investigated the various applied bias voltages(forward and reverse) in chalcogenide thin films. A pumping (inducing) and a probing bean were using a linearly polarized He-Ne laser light (633nm) and semiconductor laser light (780nm), respectively. The result was shown that the birefringence had a higher value in DC +2V than the others, Also, we obtained the birefringence in the electric field effects by various voltages. In addition, we have discussed the anisotropy property of chalcogenide thin films by the electric field effects.

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