Electrical Properties of Plasma Polymerized Hexamethyldisiloxane Thin Film

플라즈마 중합법에 의한 헥사메틸디실록산 박막의 전기적 특성

  • 이상희 (인하대학교 전기공학과) ;
  • 이덕출 (인하대학교 전기공학과)
  • Published : 2001.01.01


Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.


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