Study the Feasibility of Optical Lithography for critical Lyers of 0.12$\mu\textrm{m}$

0.12$\mu\textrm{m}$설계규칙을 갖는 DRAM 셀 주용 레이어의 OPC 및 PSM

  • 박기천 (원광대학교 물리 반도체학부) ;
  • 오용호 (원광대학교 물리 반도체학부) ;
  • 임성우 (원광대학교 물리 반도체학부) ;
  • 고춘수 (원광대학교 물리 반도체학부) ;
  • 이재철 (원광대학교 물리 반도체학부)
  • Published : 2001.01.01

Abstract

We studied the feasibility of optical lithography for the critical layers of 0.12${\mu}{\textrm}{m}$ DRAM assuming ArF excimer laser as a light source. To enhance the fidelity of aerial image and process margin, Phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed Optical Proximity Correction (OPC) software. As the result, w found that the aerial image of critical layers of DRAM cell with 0.12${\mu}{\textrm}{m}$ design rule could not be reproduced with binary masks. But if we use PSM or optical proximity corrected PSM, the fidelity of aerial image ,resolution and process margin are so much enhanced that they could be processed with optical lithography.

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