Growth and electrical properties of $MgTiO_3$ thin films

$MgTiO_3$산화물 박막의 성장 및 전기적 특성 연구

  • 강신충 (성균관대학교 재료공학과) ;
  • 임왕규 (성균관대학교 재료공학과) ;
  • 안순홍 (성균관대학교 전기.전자 및 컴퓨터공학부) ;
  • 노용한 (성균관대학교 전기.전자 및 컴퓨터공학부) ;
  • 이재찬 (성균관대학교 재료공학과)
  • Published : 2000.09.01


$MgTiO_3$thin films have been grown on various substrates by pulsed laser deposition (PLD) to investigate the application for microwave dielectrics and optical devices. Epitaxial $MgTiO_3$thin films were obtained on sapphire (c-plane$A1_2O_3$$MgTiO_3$thin films deposited on $SiO_2/Si$ and platinized silicon ($Pt/Ti/SiO_2/Si$) substrates were highly oriented. $MgTiO_3$thin films grown on sapphire were transparent in the visible and had a sharp absorption edge about 290 nm. These $MgTiO_3$thin films had extremely fine feature of surface morphology, i.e., rms roughness of 0.87 nm, which was examined by AFM. We have investigated the dielectric properties of the $MgTiO_3$thin films in $MIM(Pt/MgTiO_3/Pt)$ capacitors. Dielectric constant and loss of $MgTiO_3$thin films deposited by PLD were about 24 and 1.5% at 1 MHz, respectively. These $MgTiO_3$thin films also exhibited little dielectric dispersion.



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