Study on New LIGBT with Multi Gate for High Speed and Improving Latch up Effect

래치 업 특성의 개선과 고속 스위칭 특성을 위한 다중 게이트 구조의 새로운 LIGBT

  • 강이구 (고려대학교 전기공학과) ;
  • 성만영 (고려대학교 전기공학과)
  • Published : 2000.04.01


In this paper a new conductivity modulated power transistor called the Lateral Insulated Gated Bipolar Transistor which included n+ ring and p-channel gate is presented. A new lateral IGBT structure is proposed to suppress latch-up and to improve turn off time by imploying n+ ring and p-channel gate and verified by MEDICI. The simulated I-V characteristics at $V_{G}$=15V show that the latch up occurs at $V_{A}$=18V and 6.9$\times$10$^{-5}$ A/${\mu}{\textrm}{m}$ for the proposed LIGBT while the conventional LIGBT latches at $V_{A}$=1.3V and 1.96${\mu}{\textrm}{m}$10$^{-5A}$${\mu}{\textrm}{m}$. It is shown that turn off characteristic of new LIGBT is 8 times than that of conventional LIGBT. And noble LIGBT is not n+ buffer layer because that It includes p channel gate and n+ ring. Therefore Mask for the buffer layer isn’t needed. The concentration of n+ ring is and the numbers of n+ ring and p channel gate are three for the optimal design.n.n.n.n.


  1. Power Semiconductor Devices B. J. Baliga
  2. IEEE Trans. on Power Electronics v.13 no.2 The State of the Art of Power Electronics in Japan Hirofumi Akagi
  3. IEEE Trans. Electron Devices v.38 no.7 Analysis of Negative Differential Resistance in the I-V Characteristics of Shorted-Anode LIGBT's M. R. Simpson
  4. proc. of ISPSD v.92 Fast Switching LIGBT Devices Fabricated in SOI Substrates D. Disney
  5. SSDM 96 A New Dual-Gate SOI LIGBT with the Shorted Anode B. H. Lee;W. O. Lee;M. S. Lim;J. E. Park;M. K. Han;Y. I. Choi