Fabrication and Characterization of PMN-PZT Thick Films Prepared by Screen Printing Method

Screen Printing법을 이용한 PMN-PZT 후막의 제조 및 특성 연구

  • 김상종 (경원대학교 전기전자공학과) ;
  • 최형욱 (경원대학교 전기전자공학과) ;
  • 백동수 (한국요업기술원) ;
  • 최지원 (한국과학기술연구원 박막기술연구센터) ;
  • 김태송 (한국과학기술연구원 박막기술연구센터) ;
  • 윤석진 (한국과학기술연구원 박막기술연구센터) ;
  • 김현재 (한국과학기술연구원 박막기술연구센터)
  • Published : 2000.11.01


Characteristics of Pb(Mg, Nb)O$_3$-Pb(Zr, Ti)O$_3$system thick films fabricated by a screen printing method were investigated. The buffer layer were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited Pt as a electrode by sputtering on Ag-Pb layer. The printed thick films were burned out at 650$\^{C}$ and sintered at 950$\^{C}$ in O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20㎛ and Ag-Pb layer acted as a diffusion barrier above 3㎛ thickness. The PMN-PZT thick films were screen printed on Pt/Ag-Pb(6m) and sintered by 2nd step (650$\^{C}$/20min and 950$\^{C}$/1h) using paste mixed PMN-PZT and binder in the ratio of 70:30, and the remnant polarization of thick film was 9.1$\mu$C/㎠ in this conditions.