C-V Characteristics of GaAs MESFETs

GaAs MESFET의 정전용량에 관한 특성 연구

  • 박지홍 (건국대학교 공과대학 전기공학과) ;
  • 원창섭 (건국대학교 공과대학 전기공학과) ;
  • 안형근 (건국대학교 공과대학 전기공학과) ;
  • 한득영 (건국대학교 공과대학 전기공학과)
  • Published : 2000.11.01

Abstract

In this paper, C-V characteristics based on the structure of GaAs MESFET’s has been proposed with wide range of applied voltages and temperatures. Small signal capacitance; gate-source and gate-drain capacitances are represented by analytical expressions which are classified into two different regions; linear and saturation regions with bias voltages. The expression contains two variables; the built-in voltage( $V_{vi}$ )and the depletion width(W). Submicron gate length MESFETs has been selected to prove the validity of the theoretical perdiction and shows good agreement with the experimental data over the wide range of applied voltages.