Current Leads Fabrication of High $T_c$ Bi System Superconductor Using Rapid Cooling Method

급속응고법을 이용한 Bi 계 고온초전도체 전류도입선 제조

  • 박용민 (충북대학교 재료공학과) ;
  • 한진만 (충북대학교 재료공학과) ;
  • 류운선 (충북대학교 재료공학과) ;
  • 류운선 (충북대학교 재료공학과)
  • Published : 2000.03.01


Current leads of high $T_{c}$ superconductor were fabricated with Bi excess B $i_{2.2}$/S $r_{1.8}$/C $a_{1}$/C $u_{2}$/ $O_{x}$ composition by rapid cooling method. The dimensions of final samples were fixed 3 mm and 8 mm diameter with 50 mm length each To control uniform density the samples were preformed by CIP(Cold Isostatic Press) process and followed by partial or full melting process after raising up to 90$0^{\circ}C$ for 30min. Plate shaped microstructure was clearly observed adjacent to the Ag tube wall and the size of plate was about 100$\mu$m. However the severe destruction of growth orientation was shown in the inner growth part. critical temperature ( $T_{c}$) was about 53~71K after directional growth while Tc was decreased about 77~80 K before directional growth. After directional growth critical current( $I_{c}$) and critical current density( $J_{c}$) in the specimen of 8 mm diameter at 50 K were about 110 A and 280 A/c $m^2$ respectively.pectively.ely.


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