Microstructure and Electrical Properties of $Pr_6$$O_{11}$-Based ZnO Varistors Doped with $Nd_24$O_3$

$Nd_24$O_3$가 첨가된 $Pr_6$$O_{11}$계 ZnO 바리스터의 미세구조 및 전기적 성질

  • 남춘우 (동의대학교 전기공학과) ;
  • 박춘현 (동의대학교 전기공학과) ;
  • 윤한수 (동의대학교 전기공학과)
  • Published : 2000.03.01

Abstract

The microstructure and electrical properties of Pr$_{6}$/O sub 11/-Based ZnO varistors with Nd$_2$O$_3$ was doped in the range of 0.0 to 2.0 mol% were investigated. Most of the added Nd$_2$O$_3$were segregated at the nodal points and grain boundaries and were found to form the Nd-rich phase. In addition the bulk intergranular layer at the grain boundaries and nodal points was consisted of Nd-rich phase and Pr-rich phase. the average grain size was decreased in the range of 7.8 to 5.6${\mu}{\textrm}{m}$ with increasing Nd$_{2}$/O sub 3/ additive content. The nonlinearity of ZnO varistors sintered at 130$0^{\circ}C$ was much more excellent than that at 135$0^{\circ}C$ ZnO varistors doped with 1.0mol% Nd$_{2}$/O sub 3/ exhibited the best nonlinearity. which is 65.2 in the nonlinear exponent and 4.5$\mu$A in the leakage current. Consequently. it is estimated that Pr$_{6}$/O sub 11/ -based ZnO varistors doped with 1.0 mol% Nd$_{2}$/O sub 3/ are to be sufficiently used as basic composition to fabricate good varistors in the future.ure.

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