Computer Modeling and characteristics of MFMIS devices Using Ferroelectric PZT Thin Film

강유전체 PZT박막을 이용한 MFMIS소자의 모델링 및 특성에 관한 시뮬레이션 연구

  • 국상호 (고려대학교 전기·전자·전파공학과) ;
  • 박지온 (고려대학교 전기·전자·전파공학과) ;
  • 문병무 (고려대학교 전기·전자·전파공학과)
  • Published : 2000.03.01

Abstract

This paper describes the structure modeling and operation characteristics of MFMIS(metal-ferroelectric-metal-insulator-semiconductor) device using the Tsuprem4 which is a semiconductor device tool by Avanti. MFMIS device is being studied for nonvolatile memory application at various semiconductor laboratory but it is difficult to fabricate and analyze MFMIS devices using the semiconductor simulation tool: Tsuprem4, medici and etc. So the new library and new materials parameters for adjusting ferroelectric material and platinum electrodes in the tools are studied. In this paper structural model and operation characteristics of MFMIS devices are measured, which can be easily adopted to analysis of MFMIS device for nonvolatile memory device application.

References

  1. 전기전자재료학회논문지 v.11 PZT 박막 커패시터의 2차 고조파 전류특성 김동철;박봉태;고중혁;문병무
  2. 전자공학회지 v.25 강유전체 메모리 기술 현황 및 전망 유병곤;유종선;이원재;김보우
  3. MRS BULLETIN Degradation Mechanism in ferroelectric and high-permittivity perovskites William L. Warren;Duane Dimos;Rainer M. Waser
  4. 1-T형 비휘발성 메모리의 강유전체와 반도체와 상호 연계에 관한 연구 신상훈
  5. IEICE trans electron v.E81 no.4 MFMISI structure fon nonvolatile ferroelectric memory using PZT thin film Tishiyuki KAWASAKI;Yoshikazu AKIYAMA;Shunsuke FUJITA;Shiro SATOH
  6. Characterization of lead zirconate-titanate(PZT) thin films for ferroelectric memory applicaionts Sungehul LEE
  7. MRS BULLETIN Structure and device characteristics of SrBi2Ta2O9-based nonvolatile random-access memories J. F. Scott;F. M. Ross;C. A. Paz de Araujo;M. C. Scott;M. Huffman