A study on the ion-concentraion distribution using by FIB irradiated on amorphous $Se_{75}Ge_{25}$ Thin film

비정질 $Se_{75}Ge_{25}$ 박막의 $Ga^{+}$ 소스를 사용한 FIB 입사에 따른 이온농도 분포에 관한 연구

  • 임기주 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 이현용 (동북대학교 금속재료연구소)
  • Published : 2000.03.01


As an energetic focused-ion beam(FIB) is irradiated on an inorganic amorphous thin film a majority of ions without a reflection at surface, is randomly collided with constituent atoms in thin film. but their distribution exhibits generally a systematic form of distribution. In our previous paper we reported the concentration distribution and the transmission per unit depth of Ga$^{+}$ ions penetrated int a-Se$_{75}$ /Ge$_{25}$ thin film using the LSS-based calculation. In this paper these simulated results are compared with those obtained by a conventional profile code(ISC) and a practical SIMS profile. Then the results of LSS-based calculation have only a small difference with those of code and SIMS Especially. in the case of Ga$^{+}$-FIB with an accelerating energy of 15keV. the depth of the maximum ion concentration is coincident with each other in an error range of $\pm$5$\AA$.EX>.


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