Investigation of the interface between diamond film and silicon substrate using transmission electron microscopy

투과 전자 현미경을 이용한 다이아몬드 박막과 실리콘 기판의 계면 연구

  • 김성훈 (신라대학교 신소재 화학)
  • Published : 2000.04.01


Diamond film was deposited on Si substrate by using microwave plasma-enhanced chemical vapor deposition (MPECVD) system. After thinning the cross section between diamond film and Si substrate by ion milling method, we investigated its interface via transmission electron microscopy We could observe that the diamond film was grown either directly on Si substrate or via the interlayer between diamond film and Si substrate. Thickness of the interlayer was varied along the cross section. The interlayer might mainly composed of Sic andlor amorphous carbon. We could observe the well-developed electron diffraction pattern of both Si and diamond around the interface. Based on this result, we can conjecture the initial growth behavior of diamond film on Si substrate.