Temperature Dependent Breakdown Voltage and On-resistance of Si Power MOSFETs

실리콘 전력 MOSFET의 온도에 따른 항복전압 및 On 저항

  • 박일용 (아주대 분자과학기술학과) ;
  • 최연익 (아주대 분자과학기술학과) ;
  • 정상구 (아주대 전자공학과)
  • Published : 2000.04.01


Closed-form expressions for the temperature dependent breakdown voltage and the on-resistance of the Si power MOSFETs were derived by employing effective temperature dependent ionization coefficient for electrons and holes. The breakdown voltage increases by 20% and the on-resistance increases 2 times when the temperature increases from 300 K to 423 K. The analytic results normalized to the values at 300 K show good agreement with the experimental data of Motorola within 3.5% and 7% for the breakdown voltage and the on-resistance, respectively.


Silicon;power MOSFETs;breakdown voltage;on-resistance;temperature;dependence


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