Ferroelectric Properties of PZT thin Films by Rapid Thermal Annealing

RTA처리한 PZT 박막의 강유전 특성

  • Jeong, Kyu-Won ;
  • Park, Young ;
  • Ju, Pil-Yeon ;
  • Cho, Ik-Hyun ;
  • Lim, Dong-Gun ;
  • Yi, Jun-Sin ;
  • Song, Joon-Tae
  • 정규원 (성균관대 전기전가컴퓨터학과) ;
  • 박영 (성균관대 전기전가컴퓨터학과) ;
  • 주필연 (성균관대 전기전가컴퓨터학과) ;
  • 조익현 (성균관대 전기전가컴퓨터학과) ;
  • 임동건 (성균관대 전기전가컴퓨터학과) ;
  • 이준신 (성균관대 전기전가컴퓨터학과) ;
  • 송준태 (성균관대 전기전가컴퓨터학과)
  • Published : 2000.04.01


PZT thin films(3500 ) have been prepared onto $Pt/Ti/SiO_2/Si$ substrates with a RF magnetron sputtering system using PB1.05(Zr0.52,Ti0.48)O3 ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at $700^{\circ}C$ for 60 seconds were like these remanent polarization were $12.1 \muC/cm^2$, coercive field were 110 kV/cm, leakage current density were $4.1\times10-7 A/cm^2,\; \varepsilonr=442,$ and remanent polarization were decreased by 22% after 1010 cycles, respectively.


RTA;RF magnetron sputtering;PZT thin films;hysteresis loop;fatigue


  1. Lee EG, Wouters DJ, Willems G, Maes HE, 'Voltage shift and deformation in the hysteresis loop of PZT thin film by defects', Applied Physics Letters, Vol. 69 No. 9, pp. 1223, 1996 https://doi.org/10.1063/1.117418
  2. R. Ramesh, Thin film ferroelectric materials and devices, pp. 221, 1997
  3. 임동길, 최세영, 정형진, 오영제, '졸-겔법으로 제조한 PbTiO3 Interlayered PZT 박막의 미세구조와 강유전 특성', 요업학회지, Vol. 32, No. 12, pp.
  4. Yamauchi S, Yoshimaru M, 'Growth of [111] oriented PZT thin film with smooth surface to improve electrical properties, Vol. 35, No. 2B, pp. 1553, 1996
  5. Katsuhiro Aoki, and Yukio Fukuda, 'Formation of reliable Pb(Ti,Zr)O3 thin-film capacitors for read/write endurance of ferroelectric non-volatile memories.' IEICE Trans. Electron., Vol. E81 C, No. 4, April. 1998
  6. Young-Min Kim, Won-Jae Lee, Ho-Gi Kim, 'Deposition of PZT films by MOCVD at low temperature and their change in properties with annealing temperature and Zr/Ti ratio', Thin Solid Films, Vol. 279 No. 1-2, 1996 https://doi.org/10.1016/0040-6090(95)08171-2
  7. II Sub Chung, June Key Lee, Chang Jung Kim, and Chee Won Chung, Integrated Ferroelectric, Vol. 16, pp. 705, 1997 https://doi.org/10.1080/10584589708013033
  8. Kim. CJ, Yoon. DS,LEE. JS, Choi. CG, No. K 'A study on the microstructure of preferred orientation of PZT thin films', Journal of Materials Research, Vol. 12 No. 4, 1997
  9. 박영, 정세민, 문상일, 정규원, 김성훈, 송준태, 이준신, 'PZT 강유전체 박막 캐패시터와 하부전극에 관한 연구', 한국전기전자재료학회 논문지, Vol. 12, No, pp. 592, 1999
  10. G Velu, D. Remiens, B. thierry, 'Ferroelectric properties of PZT thin films prepared by sputtering with stoichiometric single oxide target: comparison between conventional and rapid thermal annealing' Journal of the European Ceramic Society, Vol. 17, pp. 1749, 1997 https://doi.org/10.1016/S0955-2219(97)00031-9
  11. 백동수, 김현권, 최형욱, 김준한, 박창엽, 신현용 '급속 열처리에 의한 PZT 강유전 박막의 제작', 대한전기학회 1993년도 하계학술대회 논문집 (B), 1 pp.1106-1109, 1993
  12. S. B. Krupanidhi, 'Recent advances in the deposition of ferroelectric thin films', Proceedings of the 3rd International Symposium on Integrated Ferroelectrics, pp. 10-29, 1991
  13. B. Jaffe et al., Piezoelectric Ceramics, Academic Press, pp.2., 1971
  14. J. F. Scott, C. A. Paz de Araujo, 'Ferroelectric Memories', Science, 246, pp.1400, 1989 https://doi.org/10.1126/science.246.4936.1400
  15. L. E. Sanchez et al, 'Process Technology Developments For GaAs Ferroelectrics Nonvolatile Memory', Integrated Ferroelectrics, vol. 2, pp. 231-241, 1992 https://doi.org/10.1080/10584589208215746
  16. Carrano. J, Sudhama. C, Chikarmane. V, Lee J,Tasch. A, Shepherd. W and Abt. N. 'Electrical and Reliability Properties of PZT Thin-Films for ULSI DRAM Applications' IEEE Transactions on Ultrasonics, Ferroelectronics and Frequency Control 38(6), pp.690-703, 1991 https://doi.org/10.1109/58.108871