Ferroelectric Properties of PZT thin Films by Rapid Thermal Annealing

RTA처리한 PZT 박막의 강유전 특성

  • Jeong, Kyu-Won ;
  • Park, Young ;
  • Ju, Pil-Yeon ;
  • Cho, Ik-Hyun ;
  • Lim, Dong-Gun ;
  • Yi, Jun-Sin ;
  • Song, Joon-Tae
  • 정규원 (성균관대 전기전가컴퓨터학과) ;
  • 박영 (성균관대 전기전가컴퓨터학과) ;
  • 주필연 (성균관대 전기전가컴퓨터학과) ;
  • 조익현 (성균관대 전기전가컴퓨터학과) ;
  • 임동건 (성균관대 전기전가컴퓨터학과) ;
  • 이준신 (성균관대 전기전가컴퓨터학과) ;
  • 송준태 (성균관대 전기전가컴퓨터학과)
  • Published : 2000.04.01

Abstract

PZT thin films(3500 ) have been prepared onto $Pt/Ti/SiO_2/Si$ substrates with a RF magnetron sputtering system using PB1.05(Zr0.52,Ti0.48)O3 ceramic target. We used two-step annealing techniques. As the RTA times and temperatures were increased, crystallization of PZT thin films were enhanced. The ferroelectric characteristics of PZT capacitors fabricated at $700^{\circ}C$ for 60 seconds were like these remanent polarization were $12.1 \muC/cm^2$, coercive field were 110 kV/cm, leakage current density were $4.1\times10-7 A/cm^2,\; \varepsilonr=442,$ and remanent polarization were decreased by 22% after 1010 cycles, respectively.

Keywords

RTA;RF magnetron sputtering;PZT thin films;hysteresis loop;fatigue

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