The Study on Characterization of Current-limiting with Diffusion Thickness of High-Tc Superconductor Thick Film

고온초전도후막의 확산두께에 따른 전류제한 특성연구

  • 임성훈 (전북대 공대 전기공학과) ;
  • 강형곤 (전북대 공대 전기공학과) ;
  • 한태희 (전북대 공대 전기공학과 졸업(공박)) ;
  • 모창호 (전북대 전기공학과 석사) ;
  • 임석진 (전북대 산업기술대학원) ;
  • 한병성 (전북대 공대 전기공학과)
  • Published : 2000.04.01

Abstract

For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

Keywords

the screen printing method;the diffusion process;characteristics of current limiting

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