The Characteristics of Titanium Disilicide Films following Manufacturing Methods

제조 방법에 따른 Titanium Disilicide 막의 특성

  • Mo, Man-Jin (Department of Chemical Engineering, Dan-kook University) ;
  • Jeon, Bup-Ju (Department of Chemical Engineering, Dan-kook University) ;
  • Jung, Il-Hyun (Department of Chemical Engineering, Dan-kook University)
  • 모만진 (단국대학교 화학공학과) ;
  • 전법주 (단국대학교 화학공학과) ;
  • 정일현 (단국대학교 화학공학과)
  • Received : 1998.08.21
  • Accepted : 1999.03.11
  • Published : 1999.05.10

Abstract

The films annealed after physical deposition of titanium and chemical deposition of amorphous silicon by plasma were formed Si-rich titanium silicide with a good quality of crystallinity and had the various lattice structures due to orientation of lattices for epitaxy growth during annealing process. Band gap of the titanium silicide had 1.14~1.165 eV and the films annealed after chemical deposition of a-Si:H by plasma were influenced by a-Si and the dangling bond offered by desorption of hydrogen. Urbach tail ($E_0$) of the films annealed after physical deposition of Ti was nearly constant within a range of 0.045~0.05 eV, and the number of defect in films annealed after chemical deposition of a-Si:H by plasma was about 2~3 times more than that in annealed Ti/Si films.

Keywords

Titanium Silicide;Band Gap;Urbach Tail

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