Optical Characteristics of Iron Silicide Films Prepared by Plasma CVD

Plasma CVD에 의해 제조된 Iron Silicide 박막의 광학적 특성

  • Kim, Kyung-soo (Department of Chemical Engineering, Dan-kook University) ;
  • Yoon, Yong-soo (Department of Chemical Engineering, Dan-kook University) ;
  • Jung, Il-Hyun (Department of Chemical Engineering, Dan-kook University)
  • 김경수 (단국대학교 화학공학과) ;
  • 윤용수 (단국대학교 화학공학과) ;
  • 정일현 (단국대학교 화학공학과)
  • Received : 1998.06.16
  • Accepted : 1999.03.08
  • Published : 1999.05.10

Abstract

The iron silicide films were prepared by chemical vapor deposition method using rf-plasma in variations of substrate temperature. rf-power, and ratio of $SiH_4$ and Fe-precursor. While iron silicide films are generally grown by ion beam synthesis (IBS) method of multi-step process, it is confirmed that iron silicide or $\beta$-phase consolidated $Fe_aSi_bC_cH_d$ was formed by one-step process in this study. The characteristics of films is variable because the different amounts of carbon and hydrogen was involved in the films as a function of dilute ratio of Fe-precursors and silane. It was shown that the different characteristics of films in carbon and hydrogen following the ratio of Fe-precursor and silane. The optical gap energy of films fabricated according to substrate temperature was invariant because active site brought in desorption of hydrogen was limiled. When rf-power was above 240 watt, the optical gap energy turned out to have high values because of dangling bonds increased by etching.

Keywords

lron Silicide;Chemical Vapor Deposition;Optical Gap Energy

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