The Physicochemical and Optical Characteristics of FeaSibCcHd Films

FeaSibCcHd 박막의 물리·화학 및 광학적 특성

  • Kim, Kyung-soo (Deparment of Chemical Engineering, Dan-kook University) ;
  • Jean, Bup-Ju (Deparment of Chemical Engineering, Dan-kook University) ;
  • Jung, Il-Hyun (Deparment of Chemical Engineering, Dan-kook University)
  • 김경수 (단국대학교 화학공학과) ;
  • 전법주 (단국대학교 화학공학과) ;
  • 정일현 (단국대학교 화학공학과)
  • Received : 1998.08.10
  • Accepted : 1998.11.02
  • Published : 1999.02.10

Abstract

When the preparation method of iron silicide films possess the annealing process, the interfacial state of the films is not fine. The good quality films were obtained as the plasma was used without annealing processing. Since the injected precursors were various active species in the plasma state, the organic compound was contained in the prepared films. We confirmed the formation of Fe-Si bonds as well as the organic compound by Fe and Si vibration mode in Raman scattering spectrum at $250cm^{-1}$ and Ft-IR. Because of epitaxy growth being progressed by the high energy of plasma at the low temperature of substrate, iron silicide was epitaxially grown to ${\beta}$-phase that had lattice structure such as [220]/[202] and [115]. Band gap of the prepared films had value of 1.182~1.174 eV and optical gap energy was shown value of 3.4~3.7 eV. The Urbach tail and the sub-band-gap absorptions were appeared by organic compound in films. We knew that the prepared films by plasma were obtained a good quality films because of being grown single crystal.

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