Dry Etching Characteristics of GaN using a Planar Inductively Coupled CHsub $CH_4/H_2/Ar$ Plasma

평판 유도 결합형 $CH_4/H_2/Ar$ 플라즈마를 이용한 GaN 건식 식각 특성

  • 김문영 (경북대 전기공학과 대학원) ;
  • 백영식 (경북대 전자전기공학부 정) ;
  • 태흥식 (경북대 전자전기공학부) ;
  • 이용현 (경북대 전기전자공학부 정) ;
  • 이정희 (경북대 전기전자공학부) ;
  • 이호준 (위덕대 전기공학과)
  • Published : 1999.09.01


A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.


a planar inductively coupled $CH_4/H_2/Ar$plasma;dry etching;GaN;etch rate;roughness


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