ZnS:Cu를 이용한 후막 전계발광소자의 고휘도 특성

High brightness property of Power Electroluminescent Device using ZnS:Cu

  • 이종찬 (원광대학 전기·전자공학부) ;
  • 박대희 (원광대학 전기·전자공학부)
  • 발행 : 1999.05.01


In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.


  1. Inorganic Materials v.32 no.9 Electroluminescence characteristics of Mn-doped ZnS-ZnTe solid solutions B. M. Sinel'nikov;T. V. Ishchenko;L. N. Krivosheeva;A. B. Sautiev;A. A. Mikhalev;V. M. Ishchenko
  2. Journal of Applied Physics v.28 A method for evaluating the frequency characteristics of ac thin film electroluminescent devices Wang Zong-Xin;Felix Cardon
  3. Japanese Journal of Applied Physics Part 2-letters v.35 no.12B Light waveform in time domain and relaxation mechanism of ZnS;Cu, Br dispersive electroluminescent devices Yuri Nakatani;Takeo Suzuki
  4. Synthetic Metals v.77 Investigation of a.c. electroluminescent structures with fullerene inclusions L. Yourukova;K. Kolentsov;A. Rachkova;N. Koprinarov;G. Pchelarov;M. Konstantinova;R. Stefanov
  5. Journal of Applied Optics v.36 no.3 Low-voltage thin-film electroluminescent devices with low-resistivity stacked insulators J. Y. Zhang;P. F. Gu;Xu Liu;J. F. Tang
  6. Japanese Journal of Applied Physics v.35 no.7 Transient measurements of the excitation efficiency in ZnS-based thin film electroluminescent devices A. Zeinert;C. Barthou;P. Benalloul;J. Benoit
  7. IEEE Trans. Electron Devices v.43 no.9 Numerical simulation of charge transfer and light emission in SrS:Ce thin-film electroluminescent devices Kristiann Neyts
  8. IEEE Trans. Electron Devices v.41 no.7 Analytical circuit model for thin film electroluminescent devices M. Ylilammi
  9. Solid state luminescence H. Kitai
  10. Journal of Materials Science-Materials in Electronics v.7 no.2 Intensity of emitted light from powder phosphors : the effects of light absorption and scattering in the powder matrix D. N. Waters
  11. KIST research report Development of next-generation flat panel display technology M. H. Oh
  12. Applied Physics Letters v.69 no.12 Thin film light emitting devices from an electroluminescent ruthenium complex J. K. Lee;D. S. Yoo;S. Handy;M. F. Rubner
  13. Thin Solid Films v.283 no.1;2 Blue emitting ACPEL devices based upon ZnS;Tm,Li A. Boudghene Stambouli;S. Hamzaoui;M. Bouderbala
  14. Thin Solid Films v.299 no.1;2 Phosphor efficiency and deposition temperature in ZnS:Mn A.C. thin film eletroluminescence display devices S. Gupta;J. C. McClure;V. P. Singh