Preparation of the SiO2 Films with Low-Dit by Low Temperature Oxidation Process

저온 산화공정에 의해 낮은 Dit를 갖는 실리콘 산화막의 제조

  • Jeon, Bup-Ju (Department of Chemical Engineering, Dan-kook University) ;
  • Jung, Il-Hyun (Department of Chemical Engineering, Dan-kook University)
  • 전법주 (단국대학교 화학공학과) ;
  • 정일현 (단국대학교 화학공학과)
  • Received : 1998.05.25
  • Accepted : 1998.09.07
  • Published : 1998.12.10


In this work, the $SiO_2$ films on the silicon substrate with different orientations were first prepared by the low temperature process using the ECR plasma diffusion as a function of microwave power and oxidation time. Before and after thermal treatment, the surface morphology, Si/O ratio from physicochemical properties, and the electrical properties of the oxide films were also investigated. The oxidation rate increased with microwave power, while surface morphology showed the nonuniform due to etching. The film quality, therefore, was lowered with increasing the defect by etching and the content of positive oxide ions in the oxide films from bulk by higher self-DC bias. The content of positive oxide ions in the oxide films with different Si orientations showed Si(100) < Si(111) < poly Si. The defects in $Si/SiO_2$ interface of $SiO_2$ film could be decreased by annealing, while $Q_{it}$ and $Q_f$ were independent of thermal treatment and the dependent on concentration of reactive oxide ions and self-DC bias of substrate. At microwave power of 300, and 400 W, the high quality $SiO_2$ film that had lower surface roughness and defect in $Si/SiO_2$ interface was obtained. The value of interface trap density, then, was ${\sim}9{\times}10^{10}cm^{-2}eV^{-1}$.


Supported by : 단국대학교


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