Characteristics of InN thin fabricated by RF reactive sputtering

고주파 반응성 스퍼터링에 의해 제작된 InN 박막의 특성

  • 김영호 (반도체제조방비국산화연구센터(호서대학교)) ;
  • 최영복 (광운대학교 전자재료공학과) ;
  • 정성훈 (광운대학교 전자재료공학과) ;
  • 홍필영 (광운대학교 전자재료공학과) ;
  • 문동찬 (광운대학교 전자재료공학과) ;
  • 김선태 (대전산업대학교 재료공학과)
  • Published : 1998.07.01


Thin film deposition of InN, which is a less-studied III-nitride compound semiconductor because of the difficulty if crystal growth, was performed by rf reactive sputtering method using In target and $N_2$reactive gas. The structrual, electrical, and optical properties of the produced films were measured and disussed according to the sputtering parameters such as deposition pressure, rf power, and substrate temperature. From the result of deposition pressure, rf power, and substrate temperature, we could obtain optimal conditions of 5m Torr, 60W, $60^{\circ}C$ for preparing InN thin film with high crystallinity, low carrier concentration, and high Hall mobility. The carrier concentration, Hall mobility, and optical bandgap of the fabricated InN thin films at optimal condition were $6.242\times10^{18}cm^{-3}, 212.526cm^2/V\cdot$s, and 1.912eV, respectively.


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