Characteristics of Polysilicon Thin Film Transistor with LDD Structure

LDD 구조의 다결성 실리콘 박막 트랜지스터의 특성

  • 황한욱 (명재대학교 전기공학과) ;
  • 황성수 (명재대학교 전기공학과) ;
  • 김용상 (명재대학교 전기공학과)
  • Published : 1998.07.01

Abstract

We have fabricated a LDD structured polysilicon thin film transistor with low leakge current and the optimized LDD length has been obtained. The device performance is improved is improved by hydrogen passivation process. The on.off current ratio of poly0Si TFT s with $0.5{\mu}m$ and $1.0{\mu}m$ LDD length is much higher than that of conventional structured device due to the decrease of leakege current. The optimized LDD length may be $0.5{\mu}$ from the experimental data such as on/off current ratio, threshold voltage and hydrogenation effect.

References

  1. SID 91 Digest Polysilicon TFT active-matrix LCD drivers Lewis, A. G.;Lee, D. D.;Bruce, R. H.;Martin, R. A.
  2. IEEE Electron Device Lett. v.16 Structual effect on band-trap-band tunneling induced drain on band-trap-band tunneling induced drain leakage in n-MOSFET's Wang, T.;Chang, T. E.;Huang, C. M.
  3. IEEE Trans. Electron Devices v.32 Anomalous leakage current in LPCVD polysilicon MOSFETs Fossum, G.;Oritz-Conde, A.
  4. Jpn. J. Appl. Phys. v.32 Fabrication method for polycrystalline silicon thin-film transistors with self-aligned lightly doped drain structure Kobayashi, K.;Murai, H.;Sakamoto, T.;Baert, K.
  5. Jpn. J. Appl. Phys. v.30 Field-induction-drain thin-film transistors for liquid-crystal display applications Tanaka, K.;Suyama, S.;Kato, K.
  6. IEEE Elec. Dev. Lett. v.8 Leakage current characteristics of offset-gate-structure polycrystalline silicon MOSFET's Seki, S.;Kogure, O.;Tsujiama, B.
  7. LEEE Trans. Electron devices v.36 A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors B. faughnan;A.C. Ipri
  8. Jpn. J. of Appl. Phys. v.34 Different hydrogen passivation mechanism between low-temperature and high-temperature poly-Si TFT's Kim, Y. S.;Choi, K. Y.;Han, M. K.