Characteristics of Polysilicon Thin Film Transistor with LDD Structure

LDD 구조의 다결성 실리콘 박막 트랜지스터의 특성

  • 황한욱 (명재대학교 전기공학과) ;
  • 황성수 (명재대학교 전기공학과) ;
  • 김용상 (명재대학교 전기공학과)
  • Published : 1998.07.01


We have fabricated a LDD structured polysilicon thin film transistor with low leakge current and the optimized LDD length has been obtained. The device performance is improved is improved by hydrogen passivation process. The current ratio of poly0Si TFT s with $0.5{\mu}m$ and $1.0{\mu}m$ LDD length is much higher than that of conventional structured device due to the decrease of leakege current. The optimized LDD length may be $0.5{\mu}$ from the experimental data such as on/off current ratio, threshold voltage and hydrogenation effect.


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