The Effect of the Anti-corrosion by$CHF_3$ Treatment after Plasma Etching of Al Alloy Films

Al 합금막의 식각후 $CHF_3$ 처리에 의한 부식억제 효과

  • 김창일 (중앙대학교 전자전기공학부) ;
  • 권광호 (한서대학교 전자공학과) ;
  • 윤용선 (한국전자통신연구원 반도체연구단) ;
  • 백규하 (한국전자통신연구원 반도체연구단) ;
  • 남기수 (한국전자통신연구원 반도체연구단) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 1998.07.01

Abstract

After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS(X-ray pheotoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, $CHF_3$ plasma treatment subsequent to the etch has been carried put. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after $CHF_3$ treatment, and the layer suppresses effectively the corrosion on the surface as the $CHF_3$treatment in the pressure of 300m Torr.

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