The Effect of the Anti-corrosion by$CHF_3$ Treatment after Plasma Etching of Al Alloy Films

Al 합금막의 식각후 $CHF_3$ 처리에 의한 부식억제 효과

  • 김창일 (중앙대학교 전자전기공학부) ;
  • 권광호 (한서대학교 전자공학과) ;
  • 윤용선 (한국전자통신연구원 반도체연구단) ;
  • 백규하 (한국전자통신연구원 반도체연구단) ;
  • 남기수 (한국전자통신연구원 반도체연구단) ;
  • 장의구 (중앙대학교 전자전기공학부)
  • Published : 1998.07.01


After etching Al-Cu alloy films using $SiCl_4/Cl_2/He/CHF_3$ plasma, a corrosion phenomenon on the metal surface has been studied with XPS(X-ray pheotoelectron spectroscopy) and SEM (Scanning electron microscopy). In Al-Cu alloy system, the corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, $CHF_3$ plasma treatment subsequent to the etch has been carried put. A passivation layer is formed by fluorine-related compounds on the etched Al-Cu surface after $CHF_3$ treatment, and the layer suppresses effectively the corrosion on the surface as the $CHF_3$treatment in the pressure of 300m Torr.


  1. J. Appl. Phys. v.52 no.4 Reactive ion etching induced corrosion of Al and Al-Cu films Lee, W. Y.(et al.)
  2. Jpn. J. Appl. Phys. v.21 no.10 Aluminum reactive ion etching employing CCl₄+Cl₂mixture Horike, Y.(et al.)
  3. J. Electrochem. Soc. v.130 no.8 Reactive ion etching of copper films Schwartz, J. C.(et al.)
  4. 月刊 Semiconductor World Al-Si-Cu合金の etching 後處理の 檢討 小林(等)
  5. 月刊 Semiconductor World Barrier metal 構造 RIE後の after-corrosion 조원(등)