Abstract

In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.

Keywords

• PLZT Thin film;
• Optical memory;
• Sol-gel;
• Electrical characteristics;
• Optical characteristics

• PLZT 박막;
• 광메모리;
• 졸-겔법;
• 전기적 특성;
• 광학 특성;

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