A Study on the Electrical Characteristics of Optical Memory PLZT Thin Films

Sol-Gel법으로 제작된 광메모리영역 PLZT박막의 전기적 특성

  • 최형욱 (경원대학교 전기전자 공학부) ;
  • 장낙원 (연세대학교 전기공학과) ;
  • 백동수 (연세대학교 전기공학과) ;
  • 박정흠 (연세대학교 전기공학과) ;
  • 박창엽 (연세대학교 전기공학과)
  • Published : 1998.01.01

Abstract

In this study, PLZT stock solutions were prepared by Sol-Gel processing after the compositions were selected in the memory region of PLZT bulk phase diagram. PLZT solutions were deposited on the ITO glass substrate by spin-coating method. The thin films were annealed by rapid thermal processing. The electric characteristics, hysteresis loop, C-V characteristics of thin films in the memory region were measured in order to investigate the electrical characteristics of PLZT thin films. In selected compositions the decrease in Zr/Ti ratio led to an increase in dielectric constant and the decrease in remanent polarization and coercieve field which brought about slim hysteresis loop.

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