Abstract

We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

Keywords

• characteristics degradation;
• effective mobility;
• field-effect mobility;
• short channel;
• p-MOSFETs

• 특성 열화;
• 유효 이동도;
• 전계효과 이동도;
• 단채널;
• 피-모스 트랜지스터;

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References

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