Studies on Molding Conditions and Physical Properties of EMC(Epoxy Molding Compounds) fiiled with Crystalline SiO2 for Microelectronic Encapsulation

결정성 SiO2 충진 EMC(Epoxy Molding Compounds)봉지재의 성형조건 및 물성에 관한 연구

  • Kim, Wonho (Dept. of Chemical Engineering, Pusan National Univ.) ;
  • Bae, Jong-Woo (Dept. of Chemical Engineering, Pusan National Univ.) ;
  • Kang, Ho-young (Dept. of Chemical Engineering, Pusan National Univ.) ;
  • Lee, Moo-Jung (Dept. of Chemical Engineering, Pusan National Univ.) ;
  • Choi, II-Dong (Dept. of Materials Engineering, Korea Maritime Univ.)
  • 김원호 (부산대학교 화학공학과) ;
  • 배종우 (부산대학교 화학공학과) ;
  • 강호영 (부산대학교 화학공학과) ;
  • 이무정 (부산대학교 화학공학과) ;
  • 최일동 (한국 해양대학교 재료공학과)
  • Received : 1997.03.28
  • Accepted : 1997.05.21
  • Published : 1997.06.10

Abstract

Due to the trends of faster and denser circuit design, dielectric properties of packaging materials for semiconductor will give a greater influence on performance and reliability. Also as chip becomes more densified, thermal dissipation becomes a critical reliability issue. Consequently, four important properties for manufacturing semiconductor packaging materials are low values of dielectric constant, high values of thermal conductivity, relatively low values of thermal expansion coefficient and low cost. Thus, in this study, to achieve increased performance of EMC, crystalline silica was selected as the filler for epoxy matrix. As a result, when the volume percent of crystal silica was 60~70%, good properties as packaging materials for semiconductor were achieved. In addition, overall molding condition of EMC in this experiment was established.

Keywords

Acknowledgement

Supported by : 과학재단

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