Preparation of YBaCuO System Superconducting Thin Films on Si(111) substrates by Chemical Vapor Deposition

CVD법에 의한 Si(111) 기판에 YBaCuO계 초전도 박막의 제조

  • Yang, Suk-Woo (Department of Chemical Engineering, Chonbuk National University) ;
  • Kim, Young-Soon (Department of Chemical Engineering, Chonbuk National University) ;
  • Shin, Hyung-Shik (Department of Chemical Engineering, Chonbuk National University)
  • 양석우 (전북대학교 화학공학과) ;
  • 김영순 (전북대학교 화학공학과) ;
  • 신형식 (전북대학교 화학공학과)
  • Received : 1997.01.28
  • Accepted : 1997.07.18
  • Published : 1997.08.10


Superconducting $YBa_2Cu_3O_y$ thin films were prepared at the deposition temperature of $650^{\circ}C$ under oxygen partial pressure of 0.0126 Torr on Si(111) and SrTiO3(100) substrates by chemical vapor deposition technique using $\beta$-diketonates of Y, Ba and Cu as source materials. The thin film fabricated on $SrTiO_3(100)$ had a $T_{c,onset}$ of 91K and $T_{c.0}$ of 87K. The thin film prepared on Si(111) had a $T_{c,onset}$ of 91K but didn't have a $T_{c.0}$ at liquid nitrogen boiling point(77.3K). Dense and two-dimensionally well alligned microstructure was developed for the film deposited on $SrTiO_3(100)$ substrate whereas a relatively porous and randomly distributed microstructure was developed for the film prepared on Si(111) substrate.



Supported by : 교육부


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