A Study on the Properties of TiN/${TiSi}_{2}$ Bilayer by a Rapid Thermal Anneal in ${NH}_{3}$ Ambient

${NH}_{3}$ 분위기에서 급속열처리에 의한 TiN/${TiSi}_{2}$ 이중구조막의 특성에 대한 고찰

  • 이철진 (고려대 대학원 전기공학과) ;
  • 성영권 (고려대 공대 전기공학과)
  • Published : 1992.08.01

Abstract

The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.