Characteristics of $TiN/TiSi_2$ Contact Barrier Layer by Rapid Thermal Anneal in $N_2$ Ambient

질소 분위기에서 순간역처리에 의해 형성시킨 $TiN/TiSi_2$ Contact Bsrrier Lauer의 특성

  • 이철진 (고려대 대학원 전기공학과) ;
  • 허윤종 (고려대 대학원 전기공학과) ;
  • 성영권 (고려대 공대 전기공학과)
  • Published : 1992.06.01

Abstract

The physical and electrical properties of TiN/TiSiS12T contact barrier were studied. The TiN/TiSiS12T system was formed by rapid thermal anneal in NS12T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NS12T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T system depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T system occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer and TiSiS1xT layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T system was increased as the thickness of deposited Ti film increased.