A New Calibration Method for the Characterization of Microwave Devices

마이크로파 소자 특성화를 위한 새로운 보정 방법

  • 신헌철 (건국대학교 전자공학과) ;
  • 유영길 (건국대학교 전자공학과) ;
  • 정의붕 (건국대학교 전자공학과) ;
  • 이종악 (건국대학교 전자공학과)
  • Published : 1991.09.01


The error networks due to the measuring systems and the test fixture must be previously calibrated in order to characterize the microwave devices. In this paper, it is presented a new method to characterize the error networks in which only two different microstrip lines are used for the calibration. Once each length of two calibrat- ing microstrip lines is accurately defined, the calibrated data can be easily obtained without acknowledgement for the propagation constant. The end effect is not considered when fabricated the microstrip lines used to calibration. The ATF13736 GaAs MESFET is characterized by means of the calibrating procedure with this method. The range of measuring frequency is 2 to 18 GHz, and the bias voltage and current are $V_{DS}$ =2.5V, $I_{DS}$ =20mA, respectively. Compared the calibrated data with data sheet, it is showed that the magnitude is nearly agreed with each other and the phase is deviated by 0.1 to 12 degrees in lower frequencies.