Extraction of Extrinsic Parameters for GaAs MESFET by S-parameters

S-파라미터를 이용한 GaAs MESFET의 외부 파라미터 추출

  • 조영송 (아주대학교 전자공학과) ;
  • 나극환 (광운대학교 전자공학과) ;
  • 박광호 (과학기술대학교 전자공학과) ;
  • 신철재 (아주대학교 전자공학과)
  • Published : 1991.06.01

Abstract

The modified method which determines the extrinsic parameters at the small signal equivalent model for GaAs MESFET is presented. It is important that extrinsic parameters are completely eliminated, in order to calculate exact intrinsic parameters. Extrinsic circuit is established by transmission lines, parasitic inductors and capacitors. After these are extracted by S-parameters, intrinsic parameters are calculated. Especially, frequency dependence of parastic inductance and capacitance is considerally constant.

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