Synthesis of Semiconducting $KTaO_3$ Thin films

  • Bae, Hyung-Jin (Department of Materials Science and Engineering, University of Florida) ;
  • Ku, Jayl (School of Electrical Engineering, Dongyang Technical College) ;
  • Ahn, Tae-Won (School of Electrical Engineering, Dongyang Technical College) ;
  • Lee, Won-Seok (School of Electrical Engineering, Dongyang Technical College)
  • Published : 2005.11.26


In this study, the synthesis and semiconducting properties of cation and defect-doped $KTaO_3$ film is reported. $KTaO_3$ is an important material for optoelectronic and tunable microwave applications. It is an incipient ferroelectric with a cubic structure that becomes ferroelectric when doped with Nb. While numerous studies have investigated the thin-film growth of semiconducting perovskites, little is reported about semiconducting $KTaO_3$ thin films. In this work, the films were grown on (001) MgO single crystal substrates using pulsed-laser deposition. Semiconducting behavior is achieved by inducing oxygen vacancies in the $KTaO_3$ lattice via growth in a hydrogen atmosphere. The resistivity of semiconducting $KTaO_3:Ca$ films was as low as 10cm, and n-type semiconducting behavior was indicated. Hall mobility and carrier concentration were $0.27cm^2/Vs$ and $3.21018cm^{-3}$, respectively. Crystallinity and microstructure of the $KTaO_3:Ca$ films were examined using X-ray diffraction and field-emission scanning microscopy.