Study on the IMD of LDMOS according to the change of Temperature

온도 변화에 따른 LDMOS의 IMD 특성에 관한 연구

  • Cho, Kyung-Rae (Department of Communication Radio Engineering, Kumoh National Institute of Technology) ;
  • Cho, Suk-Hui (Department of Communication Radio Engineering, Kumoh National Institute of Technology) ;
  • Kim, Byung-Chul (Department of Communication Radio Engineering, Kumoh National Institute of Technology)
  • 조경래 (금오공과대학교 전파통신공학과) ;
  • 조숙희 (금오공과대학교 전파통신공학과) ;
  • 김병철 (금오공과대학교 전파통신공학과)
  • Published : 2005.11.05

Abstract

In this dissertation, a temperature characteristics of the LDMOS is proposed by the method of changing the gate voltage to find the optimum points when the IMD characteristics is changed by the atmosphere temperature. Experimental results have good agreement with the ADS simulation about the 3rd and 5th IMD when the gate voltage is changed with the fixed temperature.

Keywords

temperature;LDMOS;IMD