Monitoring of semiconductor plasma process using wavelet and X-ray photoelectron spectroscopy

웨이브릿과 X-ray 광전자 분광법을 이용한 반도체 플라즈마 공정 감시 기법

  • Published : 2005.05.14

Abstract

Processing Plasmas are very sensitive to a variation in process parameters, To maintain process quality and device field, plasma malfunction should be tightly monitored with high sensitivity. A new monitoring method is presented and this was accomplished by applying discrete wavelet transformation to X-ray photoelectron spectroscopy. XPS data were collected during a plasma etching of silicon carbide. Various effects of DWT factor on fault sensitivity were optimized experimentally. Compared to raw data, total percent sensitivity for DWT data demonstrated a significantly improved sensitivity to plasma faults induced by bias power.